document number: 88386 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions sm8a27 vishay general semiconductor features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 175 c capability suitable for high reliability and automotive requirement ? low leakage current ? low forward voltage drop ? high surge capability ? meets iso7637-2 surge specification ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. mechanical data case: do-218ab molding compound meets ul 94 v-0 flammabi lity rating base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: heatsink is anode primary characteristics v br 27 v p ppm (10 x 1000 s) 6600 w p d 8 w i rsm 130 a i fsm 700 a t j max. 175 c do-218ab maximum ratings (t c = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipation with 10/1000 s waveform p ppm 6600 w power dissipation on in finite heatsink at t c = 25 c (fig. 1) p d 8.0 w non-repetitive peak reverse surge cu rrent for 10 s/10 ms exponentially decaying waveform i rsm 130 a maximum working stand-off voltage v wm 22.0 v peak forward surge current 8. 3 ms single ha lf sine-wave i fsm 700 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88386 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 09-feb-11 sm8a27 vishay general semiconductor note (1) measured on a 300 s square pulse width note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - power derating curve fig. 2 - load dump power characteristics (10 ms exponential waveform) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol min. typ. max. unit reverse zener voltage i z = 10 ma v z 24.0 - 30.0 v zener voltage temperature coefficient i z = 10 ma v ztc --36mv/c clamping voltage for 10 s/10 ms exponentially de caying waveform i pp = 75 a v c - - 40.0 v instantaneous forward voltage i f = 6.0 a v f (1) - - 0.98 v i f = 100 a - 0.93 - reverse leakage current rated v wm t j = 25 c i r --1.0 a t j = 175 c - - 50.0 thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to case r ? jc 0.90 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sm8a27he3/2d (1) 2.605 2d 750 13" diameter plasti c tape and reel, anode towards the sprocket hole 0 2.0 4.0 6.0 8.0 0 50 100 150 200 power di ss ipation (w) ca s e temperature (c) 0 2000 1000 3000 4000 5000 6000 25 50 75 100 125 150 175 load dump power (w) ca s e temperature (c)
document number: 88386 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 sm8a27 vishay general semiconductor fig. 3 - pulse waveform fig. 4 - reverse power capability fig. 5 - typical instantaneous forward characteristics fig. 6 - typical reverse characteristics fig. 7 - typical transient thermal impedance 0 50 100 150 0 10 20 30 40 input peak pul s e current (%) t - time (m s ) t d t r = 10 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s defined a s the point where the peak current decay s to 50 % of i ppm rever s e s urge power (w) 1000 10 000 10 100 pul s e width (m s ) - ? i pp exponential waveform in s tantaneou s forward current (a) 100 10 1.0 0.1 0.01 in s tantaneou s forward voltage (v) 0.35 0.45 0.55 0.65 0.75 0.85 0.95 t j = 150 c t j = 25 c 100 10 5203550658095 1 0.1 0.01 0.001 0.0001 percentage of v br (%) in s tantaneou s rever s e current (a) t j = 25 c t j = 175 c t - pul s e width ( s ) tran s ient thermal impedance (c/w) 100 10 1 0.1 0.01 0.01 0.1 1 10 100 r jc r ja
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88386 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 09-feb-11 sm8a27 vishay general semiconductor package outline dimensions in inches (millimeters) do-218ab mountin g pad layout 0.413 (10.5) 0.374 (9.5) 0.091 (2.3) 0.067 (1.7) 0.116 (3.0) 0.093 (2.4) 0.150 (3.8) 0.126 (3.2) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.116 (3.0) 0.093 (2.4) 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.342 (8.7) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.028 (0.7) 0.020 (0.5) 0.138 (3.5) 0.098 (2.5) lead 1 0.098 (2.5) 0.059 (1.5) lead 2/metal heat s ink 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) min.
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